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Growth of epitaxial tetragonal Pb(Zr,Ti)O3 thin films with 100% polar-axis-orientation and their electrical properties

Published online by Cambridge University Press:  01 February 2011

Hitoshi Morioka ,
Shintaro Yokoyama ,
Takahiro Oikawa ,
Keisuke Saito  and
Hiroshi Funakubo
Hitoshi Morioka
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226–8502, Japan
Shintaro Yokoyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226–8502, Japan
Takahiro Oikawa
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226–8502, Japan
Keisuke Saito
Affiliation:
Application Laboratory, Bruker AXS Yokohama, 221–0022, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama, 226–8502, Japan
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Abstract

Pb(ZrxTi1-x)O3 (PZT) thin films with the various Zr/(Zr+Ti) ratios and the film thickness of 50 and 250 nm were epitaxiallly grown on (100)cSrRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition at 540 °C. 50 nm-thick tetragonal PZT films consistd of 100% c-axis-orientation for the Zr/(Zr+Ti) ratio ranging from 0.13 to 0.56, while 250 nm-thick tetragonal ones consistd of about 70% c-axis-orientation for the range from 0.19 to 0.45. On the other hand, 50 and 250 nm-thick films composed rhombohedral single phase for the Zr/(Zr+Ti) ratio above 0.56 and 0.60, respectively. Mixture region of tetragonal and rhombohedral phases was observed from 0.45 to 0.60 for 250 nm-thick films, but was not for 50 nm-thick ones. Remanent polarization monotonously decreased with increasing the Zr/(Zr+Ti) ratio for 50 nm-thick films in tetragonal PZT films. These results show that Ti rich tetragonal PZT thin films have large spontaneous polarization with good square-shape hysteresis loops and are applicable for the high-density capacitor-type ferroelectric random access memories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C6.2
Copyright
Copyright © Materials Research Society 2004

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References

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