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The Growth of Epitaxial NiSi2 Single Crystals on Silicon by the Use of Template Layers

Published online by Cambridge University Press:  15 February 2011

R. T. Tung ,
J. M. Gibson  and
J. M. Poate
R. T. Tung
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Gibson
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
J. M. Poate
Affiliation:
Bell LaboratoriesMurray Hill, New Jersey 07974
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Abstract

A novel crystal growth technique for NiSi2 epitaxy is presented which utilizes thin silicide (<60Å) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystalline NiSi2 films can be grown with either type A or type B orientations on Si(111). Continuous single crystalline NiSi2 is grown on Si(100) with flat interface and uniform thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 435
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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