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Growth of Epitaxial Gan Films Using Zno Buffer Layer by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

T. F. Huang ,
E. Tuncel ,
J. S. Yeo  and
J. S. Harris JR.
T. F. Huang
Affiliation:
Solid State Electronics Laboratory, CIS 126, Stanford University, CA 94305.
E. Tuncel
Affiliation:
Solid State Electronics Laboratory, CIS 126, Stanford University, CA 94305.
J. S. Yeo
Affiliation:
Department of Materials Science and Engineering, Stanford University, CA 94305
J. S. Harris JR.
Affiliation:
Solid State Electronics Laboratory, CIS 126, Stanford University, CA 94305.
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Abstract

GaN films and ZnO buffer layers have been deposited on c-cut sapphire substrates by pulsed laser deposition (PLD) employing a KrF laser (λ = 248 nm). The influence of the deposition parameters, such as substrate temperature and gas pressure during growth, have been studied. GaN films grown above 700 °C are single crystalline and the full width of half-maximum (FWHM) of the GaN (0002) peak decreases to 0.37° as the growth temperature increases to 800 °C. The optimum growth pressure for GaN is determined to be 0.01 torr N2. The optical transmission below the bandgap of the GaN film grown at this pressure is over 85%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 389
Copyright
Copyright © Materials Research Society 1996

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