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Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

Published online by Cambridge University Press:  15 February 2011

S. Madhavan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802–5005, [email protected]
B. J. Gibbons
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802–5005, [email protected]
A. Dabkowski
Affiliation:
Institute of Materials Research, McMaster University, Hamilton, Ontario, Canada L8S 4M1
H. A. Dabkowska
Affiliation:
Institute of Materials Research, McMaster University, Hamilton, Ontario, Canada L8S 4M1
S. Trolier-Mckinstry
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802–5005, [email protected]
Ying Liu
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802–5005, [email protected]
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Abstract

Epitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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