Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T17:39:51.582Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Diamond from Sputtered Atomic Carbon and Atomic Hydrogen

Published online by Cambridge University Press:  25 February 2011

Darin S. Olson ,
Michael A. Kelly ,
Sanjiv Kapoor  and
Stig B. Hagstrom
Darin S. Olson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Michael A. Kelly
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Sanjiv Kapoor
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Stig B. Hagstrom
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA 94305
Get access

Abstract

Diamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The substrate was exposed to a bombardment of sputtered carbon atoms from a graphite target in a helium DC glow discharge, and subsequently exposed to atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. Deposited film quality, and growth rate are presented as a function of carbon flux, and atomic hydrogen flux. The observed increase in growth rate with atomic hydrogen indicates that a surface reaction mechanism may be responsible for growth. The saturation of the utilization of carbon confirms that the diamond growth is probably a surface reaction. Based on this work we propose that the growth of diamond films in the sequential CVD reactor is most likely governed by surface reactions, and that the necessity of gas phase precursors can be precluded.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 335
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yarbrough, W. A. and Messier, R., Science, 247, 688, (1990).CrossRefGoogle Scholar
2. Angus, J. C, Hayman, C. C. Science, 241, 913, (1988).Google Scholar
3. Badzian, A. R., DeVries, R. C., Mat. Res. Bull., 23, 385, (1988).Google Scholar
4. Harris, S. J., Martin, L. R., J. Mater. Res., 5, 2313, (1990).Google Scholar
5. Celii, F. G., Butler, J. E., New Diamond Science and Technology, MRS Int. Conf. Proc., 201, (1991).Google Scholar
6. Frenklach, M., Spear, K. E., J. Mater. Res., 3 (1), 133 (1988).CrossRefGoogle Scholar
7. Harris, S. J., Appl. Phys. Lett., 56, 2298, (1990).Google Scholar
8. Tsuda, M., Nakajima, M, Oikawa, S, J. Am. Chem. Soc., 108, 5780, (1986).Google Scholar
9. Ravi, K. V., Joshi, A., Appl. Phys. Lett., 58 (3), 246 (1991).Google Scholar
10. Olson, D. S., Kelly, M. A., Kapoor, S., Hagstrom, S. B., MRS Int. Conf. Proc., 242, in press (1992).Google Scholar
11. Kelly, M. A., Kapoor, S., Olson, D. S., Hagstrom, S. B., MRS Int. Conf. Proc., 242, in press (1992).Google Scholar
12. Kelly, M. A., Olson, D. S., Kapoor, S., Hagstrom, S. B., Appl. Phys. Lett., 60 (20), 2502 (1992).Google Scholar
13. Angus, J. C. (private communication, April 1992).Google Scholar