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Growth of CuInS2 Films on Crystalline Substrates

Published online by Cambridge University Press:  10 February 2011

R. Hunger ,
R. Scheer ,
M. Alt  and
H. J. Lewerenz
R. Hunger
Affiliation:
Hahn-Meitner-Institute, Department of Physical Chemistry, 14109 Berlin, Germany
R. Scheer
Affiliation:
Hahn-Meitner-Institute, Department of Physical Chemistry, 14109 Berlin, Germany
M. Alt
Affiliation:
Hahn-Meitner-Institute, Department of Physical Chemistry, 14109 Berlin, Germany
H. J. Lewerenz
Affiliation:
Hahn-Meitner-Institute, Department of Physical Chemistry, 14109 Berlin, Germany
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Abstract

CuInS2 films were grown by molecular beam epitaxy (MBE) on hydrogen terminated Si(111) substrates with 4° miscut. X-ray diffraction (XRD) texture analysis reveals that CuInS2 was grown heteroepitaxially with the epitaxial relationships CuInS2(112) II Si(111) and [111] II [111]. Moreover, a substantial amount of rotational twins is observed. The crystalline order is maintained across the interface as observed by cross-sectional transmission electron microscopy (XTEM). XRD and scanning electron microscopy (SEM) investigations show that nonstoichiometric preparation greatly influences the growth morphology and leads to the formation of secondary phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 303
Copyright
Copyright © Materials Research Society 1996

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References

[1] Walter, T., Braunger, D., Hariskos, D., Köible, C. and Schock, H.W., Proceedings of the 13th European Photovoltalc Solar Energy Conference, Nice, France 1995, p.597.Google Scholar
[2] Scheer, R., Walter, T., Schock, H.W., Fearheiley, M.L. and Lewerenz, H.J., Appl. Phys. Lett. 63, 3294 (1993).Google Scholar
[3] Kern, W., J. Electrochem. Soc. 137, 1887 (1990).Google Scholar
[4] Rauscher, S., Dittrich, T., Aggour, M., Rappich, J., Flietner, H. and Lewerenz, H.J., Appl. Phys. Lett. 66, 3018 (1995).Google Scholar
[5] Scheer, R., Diesner, K. and Lewerenz, H.-J., Thin Solid Films 268, 130 (1995).Google Scholar
[6] Ligeon, E., Chami, C., Danielou, R., Feuillet, G., Fontenille, J., Saminadayar, K., Ponchet, A., Cibert, J., Gobil, Y. and Tatarenko, S., J. Appl. Phys. 67, 2428 (1990).Google Scholar
[7] Chen, Y.P., Faurie, J.P. and Sivananthan, S., J. Electron. Mater. 24, 475 (1995).Google Scholar