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Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases

Published online by Cambridge University Press:  01 February 2011

Mark Loboda ,
M. F. MacMillan ,
J. Wan ,
G. Chung ,
E. Carlson ,
Y. Makarov ,
A. Galyukov  and
M. J. Molnar
Mark Loboda
Affiliation:
[email protected], Dow Corning Compound Semiconductors, Science and Technology, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686, United States, 989-496-6249, 989-496-6360
M. F. MacMillan
Affiliation:
[email protected], Dow Corning Compound Semiconductors, Science and Technology, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686, United States
J. Wan
Affiliation:
[email protected], Dow Corning Compound Semiconductors, Science and Technology, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686, United States
G. Chung
Affiliation:
[email protected], Dow Corning Compound Semiconductors, Science and Technology, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686, United States
E. Carlson
Affiliation:
[email protected], Dow Corning Compound Semiconductors, Science and Technology, PO Box 994, Mail Stop AUB1007, Midland, MI, 48686, United States
Y. Makarov
Affiliation:
[email protected], Semiconductor Technology Research, Inc., 12901 Mill Shed Dr., Richmond, VA, 23112, United States
A. Galyukov
Affiliation:
[email protected], Semiconductor Technology Research, Inc.,, 12901 Mill Shed Dr., Richmond, VA, 23112, United States
M. J. Molnar
Affiliation:
[email protected], Hemlock Semiconductor Corporation, 12334 Geddes Rd., Hemlock, MI, 48426, United States
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Abstract

The forefront of semiconductor silicon carbide technology now approaches commercialization for both materials and device technology. The commercialization of SiC epitaxy processes requires improvement in defect density, uniformity and repeatability. Especially problematic are graphite particles, gas phase nucleation of particles and the limitations placed on achieving growth rates that can positively impact process costs. When it approached the same historical point of development, silicon epitaxy technology shifted to the use of chlorosilane precursor gases to suppress gas phase nucleation and achieve targeted growth rates. Recent work on SiC epitaxy chemistry now investigates the use of HCl, halocarbons and most recently chlorosilane precursors. This paper will review the original work on gas phase nucleation and its control in silicon epitaxy processes using HCl additives and chlorosilanes. Using established dissociation pathways for chlorosilanes, equilibrium chemical reaction models are used to assess the impact of HCl, halocarbons and chlorosilane precursors on growth rates and particle formation SiC epitaxy. Experimental data is presented on the comparative performance of HCl additive and chlorosilane precursors in SiC epitaxy and film properties.

Keywords

chemical vapor deposition (CVD) (deposition)epitaxysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B02-03
Copyright
Copyright © Materials Research Society 2006

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