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Growth of C60 Fullerene Films on Semiconductor Surfaces

Published online by Cambridge University Press:  02 August 2011

Elena V. Basiuk (Golovataya-Dzhymbeeva) ,
José G. Bañuelos ,
Alejandro Esparza  and
José M. Saniger
Elena V. Basiuk (Golovataya-Dzhymbeeva)
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apdo. Postal 70-186, 04510 México D.F., Mexico
José G. Bañuelos
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apdo. Postal 70-186, 04510 México D.F., Mexico
Alejandro Esparza
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apdo. Postal 70-186, 04510 México D.F., Mexico
José M. Saniger
Affiliation:
Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apdo. Postal 70-186, 04510 México D.F., Mexico
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Abstract

We report on a study of vacuum-deposited thin films of C60 fullerene on Si (100) and InP (100) semiconductor surfaces. The film morphology and C60—substrate interactions were investigated by using atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). For the film deposition, both patterned Si aand InP surfaces were used. It was found that the stronger interactions occur between C60 molecules and Si surface, than between C60 molecules and InP surface. On InP surface with microrelief of parallel V-grooves oriented in [011] direction, C60 films grow preferentially above the groove walls, with C60 grains arrayed in the direction perpendicular to the groove axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.12
Copyright
Copyright © Materials Research Society 2003

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