Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:07:26.583Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Bulk AlN and GaN Single Crystals by Sublimation

Published online by Cambridge University Press:  10 February 2011

C. M. Balkas ,
Z. Sitar ,
T. Zheleva ,
L. Bergman ,
I. K. Shmagin ,
J. F. Muth ,
R. Kolbas ,
R. Nemanich  and
R. F. Davis
C. M. Balkas
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
T. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
L. Bergman
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC
I. K. Shmagin
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
J. F. Muth
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
R. Kolbas
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
R. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
Get access

Abstract

Single crystals of A1N to 1 mm thickness were grown in the range 1950-2250°C on 10×10 mm2 α(6H)-SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AlN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH3) flow. Optical microscopy, Raman and photoluminescence results are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Slack, G. A. and McNelly, T. F., J. Cryst. Growth., 34, 263 (1976).Google Scholar
2. Slack, G. A. and McNelly, T. F., J. Cryst. Growth. 42,560 (1977).Google Scholar
3. Knippenberg, W. F. and Verspui, G., US Pat, 3.634.149.Google Scholar
4. Huml, J. O., Layne, G. S., US. Pat., 3.607.014.Google Scholar
5. Huml, J. O., Layne, G. S., US. Pat., 3.598.526.Google Scholar
6. Dryburgh, P. M., The Ninth International Conference on Crystal Growth, ICCG–9 (1989).Google Scholar
7. Campbell, R. B. and Chang, H. C., Technical Report AFAPL-TR-67-23, Westinghouse Electrical Corporation, Pittsburgh, Pennsylvania (1967).Google Scholar
8. Pastrñák, J. and Roskovcová, L., Phys. Stat. Sol., 7, 331, (1964).Google Scholar
9. Dugger, C. O., Mat. Res. Bull., 9, 331, (1974).Google Scholar
10. Dugger, C. O., Air Force Report, AFORL-TR-75-0486, Hanscom AFB Massachusetts, (1975)Google Scholar
11. Elwell, D. and Elwell, M. M. Prog. Crystal Growth and Charact., 17, 53, (1988)Google Scholar
12. Ejder, E., J. Cryst. Growth, 22, 44, (1974)Google Scholar
13. Gershenzon, M., ONR Rept. 243-004F, May (1981).Google Scholar
14. Pichugin, I. G. and Yaskov, D. A., Neorg. Mat., 6, 1973, (1970).Google Scholar
15. Elwell, D., Fiegelson, R. S., Simkins, M. M. and Tiller, W. A., J. Cryst. Growth, 66, 45, (1984).Google Scholar
16. Frosh, C. J., J. Phys. Chem., 66, 877 (1962).Google Scholar
17. Logan, R. A. and Thurmond, C. D., J. Electrochem. Soc, 119, 1727, (1972).Google Scholar
18. Ogino, T. and Aoki, M., Oyo Butsuri, 48, 269, (1962).Google Scholar
19. Karpinski, J., Jun, J. and Porowski, S., J. Cryst. Growth, 66, 11, (1984).Google Scholar
20. Karpinski, J., and Porowski, S., J. Cryst. Growth, 66, 1, (1984).Google Scholar
21. Porowski, S., et.al., Inst. Phys. Conf. Ser. no: 137, 369, (1994).Google Scholar
22. Sakai, S., Kurai, S., Abe, T. and Naoi, Y., Jpn. J. Apl. Phys., 35, L77, (1996)Google Scholar
23. Balkaş, C. M. and Davis, R. F., J.Am. Ceram. Soc, 79, [9], 2309, (1996).Google Scholar
24. Balkaş, C. M. Basçeri, C. and Davis, R. F., Powder, J.. Difftraction, 10, [4], 266, (1995).Google Scholar
25. Bergman, L. and Nemanich, R. J., Annu. Rev. Mater. Sci., 26, 551, (1996).Google Scholar