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Growth of Bulk AlN and GaN Single Crystals by Sublimation

Published online by Cambridge University Press:  10 February 2011

C. M. Balkas ,
Z. Sitar ,
T. Zheleva ,
L. Bergman ,
I. K. Shmagin ,
J. F. Muth ,
R. Kolbas ,
R. Nemanich  and
R. F. Davis
C. M. Balkas
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
T. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
L. Bergman
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC
I. K. Shmagin
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
J. F. Muth
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
R. Kolbas
Affiliation:
Department of Electrical Engineering, North Carolina State University, Raleigh, NC
R. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Single crystals of A1N to 1 mm thickness were grown in the range 1950-2250°C on 10×10 mm2 α(6H)-SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AlN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH3) flow. Optical microscopy, Raman and photoluminescence results are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 41
Copyright
Copyright © Materials Research Society 1997

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References

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