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Growth of AZO on flexible substrate using ALD system as a transparent conducting oxide for solar cells

Published online by Cambridge University Press:  18 August 2011

Tara Dhakal ,
Abhishek Nandur ,
Rachel Christian ,
Daniel Vanhart ,
Parag Vasekar  and
Charles R. Westgate
Tara Dhakal
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
Abhishek Nandur
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
Rachel Christian
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
Daniel Vanhart
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
Parag Vasekar
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
Charles R. Westgate
Affiliation:
Center for Autonomous Solar Power (CASP), Binghamton University, Binghamton, NY 13902
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Abstract

Aluminum doped zinc oxide (AZO) thin film is gaining momentum as a transparent conducting oxide because its optical and electrical properties are optimal for a photovoltaic device. We report growth of AZO thin film using an Atomic Layer Deposition (ALD) system, which is known to deposit layers on a substrate with atomic layer precision. The precursors used for aluminum and zinc were Trimethylaluminum (TMA) and Dimethylzinc (DMZ) respectively. Alternating cycles of TMA and DMZ were introduced to the heated deposition chamber such that a desired aluminum doping was obtained on the AZO films grown. The films were grown on flexible substrates like PET and also on single crystalline Si(100) and float-glass substrates. An optimal aluminum doping (3 at.%) on the AZO film of thickness 575 nm gave a sheet resistance (Rs) of 97 Ω/□ with corresponding resistivity of 5.6 x 10-3 Ω.cm. The value of the carrier concentration and hall mobility were 1.86 x 1020 cm-3 and 6.5 cm2V-1s-1 respectively. Optical measurement showed 90% transmission in most of the visible spectrum. X-ray diffraction spectra of the film showed all characteristic ZnO hexagonal lattice peaks.

Keywords

atomic layer depositiontransparent conductorphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1327: Symposium G – Complex Oxide Materials for Emerging Energy Technologies , 2011 , mrss11-1327-g03-24
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Hao, Xiao-Tao, Tan, Li-Wei, Ong, Kian-Soo, and Zhu, Furong, Journal of Crystal Growth 287, 44 (2006)Google Scholar
2. Murdoch, G. B., Hinds, S., Sargent, E. H., Tsang, S. W., Mordoukhovski, L., and Lu, Z. H., Appl. Phys. Lett. 94, 213301 (2009)Google Scholar
3. Vasekar, Parag S., Dhere, Neelkanth G., and Moutinho, Helio, Solar Energy, 83, 1566 (2009)Google Scholar
4. Sato, H, Minami, T, Takata, S, Miyata, T and Ishii, M, Thin Solid Films 236,14 (1993)Google Scholar
5. Jeong, S.H., Lee, J.W., Lee, S.B., Boo, J.H., Thin Solid Films, 435, 78 (2003)Google Scholar
6. Yang, Weifeng, Liu, Zhuguang, Peng, Dong-Liang, Zhang, Feng, Huang, Huolin, Xie, Yannan, Wu, Zhengyun, Applied Surface Science 255, 5669 (2009)Google Scholar
7. George, S. M., Ott, A. W., and Klaus, J. W., J. Phys. Chem. 100, 13121 (1996)Google Scholar
8. Elam, J. W. and Goerge, S. M., Chem. Mater. 15, 1020 (2003)Google Scholar
9. Dhakal, Tara, Mukherjee, Devajyoti, Hyde, Robert, Srikanth, Hariharan, Mukherjee, Pritish and Witanachchi, Sarath, Mater. Res. Soc. Symp. Proc. 1199, F03–44 (2010)Google Scholar
10. Pei, Z.L., Zhang, X.B., Zhang, G.P., Gong, J., Sun, C., Huang, R.F., and Wen, L.S., Thin Solid Films 497, 20 (2006)Google Scholar