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Growth of Amorphous Silicon Materials and Devices with Improved Stability

Published online by Cambridge University Press:  16 February 2011

Vikram L. Dalai ,
E. X. Ping ,
Sanjeev Kaushal ,
Mark Leonard ,
Mohan K. Bhan  and
K. Han
Vikram L. Dalai
Affiliation:
Dept. of Electrical and Computer Engr. and microelectronics Research Center, Iowa State University, Ames, Iowa 50011
E. X. Ping
Affiliation:
Dept. of Electrical and Computer Engr. and microelectronics Research Center, Iowa State University, Ames, Iowa 50011
Sanjeev Kaushal
Affiliation:
Dept. of Electrical and Computer Engr. and microelectronics Research Center, Iowa State University, Ames, Iowa 50011
Mark Leonard
Affiliation:
Microelectronics Research Center, ISU, Ames, Iowa 50011
Mohan K. Bhan
Affiliation:
Microelectronics Research Center, ISU, Ames, Iowa 50011
K. Han
Affiliation:
Microelectronics Research Center, ISU, Ames, Iowa 50011
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Abstract

We discuss the growth of a-Si:H Materials and devices using a low pressure remote ECR plasma. We show that by using this plasma in an etching mode with a high H flux, we can grow high quality a-Si:H films at high temperatures (325–375 C). These films have significantly improved stability compared to standard a-Si:H films deposited using glow discharge. We can further improve the stability of these films by incorporating minute (sub ppm levels) of boron during growth. We also report on the fabrication of devices at these temperatures using this very reactive plasma. We discuss the precautions taken to obtain good devices, and discuss how the devices can be further improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 335
Copyright
Copyright © Materials Research Society 1994

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References

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