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Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

Published online by Cambridge University Press:  21 March 2011

Yoshihiro Irokawa ,
Noboru Yamada ,
Masahito Kodama  and
Tetsu Kachi
Yoshihiro Irokawa
Affiliation:
Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi, 480-1192, JAPAN
Noboru Yamada
Affiliation:
Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi, 480-1192, JAPAN
Masahito Kodama
Affiliation:
Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi, 480-1192, JAPAN
Tetsu Kachi
Affiliation:
Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi, 480-1192, JAPAN
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Abstract

Silicon (Si) substrates having cavities just beneath the surface layer (multi-cavity Si substrates) were examined whether they worked as the stress relaxation structure in 3C-SiC heteroepitaxial growth on Si. Single crystalline 3C-SiC layers were grown on the multi-cavity Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by the cross-sectional TEM observations and the Micro-Raman spectroscopy. The TEM results showed that this structure reduced the defect density in the 3C-SiC layers. The averaged full width at half-maximum (FWHM) of LO Raman mode in the 3C-SiC layerson the multi-cavity Si substrates became narrower than that on the conventional Si substrates. Furthermore, Schottky barrier structures showed that the reverse leakage current of the diodes using the multi-cavity Si substrates is smaller than that using the conventional Si substrates. These results indicate that the multi-cavity Si substrates are effective for stress relaxation in the 3C-SiC layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.11
Copyright
Copyright © Materials Research Society 2001

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