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Growth Morphology of Ag Islands on GaAs (110) at Low Coverage: Monte Carlo Simulations

Published online by Cambridge University Press:  21 February 2011

Ashok Challa ,
Timothy S. Cale  and
Jeff Drucker
Ashok Challa
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
Timothy S. Cale
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287–6206
Jeff Drucker
Affiliation:
Department of Physics, University of Texas at El Paso, El Paso, TX 79968–0515
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Abstract

The growth morphology of Ag on GaAs (110) surface, at low coverage, is investigated with Monte Carlo simulations using a solid-on-solid model. Experimentally Ag deposited at room temperature forms isotropie islands and forms islands elongated along the <110> direction when deposited at 250°C. The preliminary results from our Monte Carlo simulations indicate that anisotropy in the surface migration and near-neighbor interactions are the main factors for the elongated islands observed for depositions performed at 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 101
Copyright
Copyright © Materials Research Society 1995

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References

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