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Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

Published online by Cambridge University Press:  25 February 2011

H. Kong ,
H. J. Kim ,
J. A. Edmond ,
J. W. Palmour ,
J. Ryu ,
C. H. Carter Jr. ,
J. T. Glass  and
R. F. Davis
H. Kong
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. A. Edmond
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. W. Palmour
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. Ryu
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
C. H. Carter Jr.
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. T. Glass
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
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Abstract

Monocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 233
Copyright
Copyright © Materials Research Society 1987

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References

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