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Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

Published online by Cambridge University Press:  10 February 2011

A. Kamath ,
B. Y. Kim ,
P. M. Blass ,
Y. M. Sun ,
J. M. White  and
D. L. Kwong
A. Kamath
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
B. Y. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
P. M. Blass
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, TX 78712
Y. M. Sun
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, TX 78712
J. M. White
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
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Abstract

We have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 335
Copyright
Copyright © Materials Research Society 1997

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References

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