Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T15:44:20.531Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth, Characterization, and Application of High Al-content AlGaN and High Power III-Nitride Ultraviolet Emitters

Published online by Cambridge University Press:  01 February 2011

Z. Ren ,
S.-R. Jeon ,
M. Gherasimova ,
G. Cui ,
J. Han ,
H. Peng ,
Y. K. Song ,
A. V. Nurmikko ,
L. Zhou  and
W. Goetz
...Show all authors
Z. Ren
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
S.-R. Jeon
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
M. Gherasimova
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
G. Cui
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
J. Han
Affiliation:
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
H. Peng
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
Y. K. Song
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
A. V. Nurmikko
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912, USA
L. Zhou
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
W. Goetz
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
M. Krames
Affiliation:
Lumileds Lighting, LLC, San Jose, CA 95131, USA
H.-K. Cho
Affiliation:
Materials Science and Engineering, Dong-A University, Saha-gu, Busan 604–714, Korea
Get access

Abstract

A study of Si-doped and Mg-doped AlxGa1-xN up to × ∼ 50 % and the characteristics of ultraviolet (UV) light emitting diodes (LEDs) with emission wavelengths at 340 nm and 290 nm are reported. By using grading super-lattices (SLs) before n-type AlGaN growth, surface roughness is much improved. Resistivity of 2.9×10-2 Ωcm and free electron concentrations of 2.9×10 cm- are achieved for n-type Al0.45Ga0.55N. The viability of effective p-type doping is defined by a minimum concentration of Mg required to offset the background impurities and, more importantly, a maximum limit above which inversion domains and structural defects start to nucleate, accompanied by a rapid degradation of electrical transport. Resistivity of 10 Ωcm and free hole concentrations above 1017 cm−3 are achieved for AlxGa1-xN up to × ∼ 50 % within an optimum window of Mg incorporation. Output powers up to 1.5 mW from small area 340 nm LEDs (< 100 μm diameter) and 110 μW from 290 nm LEDs (100 μm diameter) directly off a planar chip have been achieved under DC condition. For large area encapsulated lamp (1×1 mm2 device area and 0.52 mm2 mesa area), output power of 79 mW from 340 nm LEDs and 8.5 mW from 290 nm LEDs are achieved under pulse mode (1kHz, 2% duty factor).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E1.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yasan, A., McClintock, R., Mayes, K., Shiell, D., Gautero, L., Darvish, S. R., Kung, P., and Razeghi, M.., Appl. Phys. Lett. 83, 4701 (2004).Google Scholar
[2] Adivarahan, V., Wu, S., Chitnis, A., Pachipulusu, R., Mandavilli, V., Shatalov, M., Zhang, J. P., Asif Khan, M., Tamulaitis, G., Sereika, A, Yilmaz, I., Shur, M. S., and Gaska, R., Appl. Phys. Lett. 81, 3666 (2002).Google Scholar
[3] Mayes, K., Yasan, A., McClintock, R., Shiell, D., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 84, 1046 (2004).Google Scholar
[4] Taniyasu, Yoshitaka, Kasu, Makoto, and Kobayashi, Naoki., Appl. Phys. Lett. 81, 1255 (2002).Google Scholar
[5] Gherasimova, M., Su, J., Cui, G., Han, J., Peng, H., Makarona, E., He, Y., Song, Y.-K., and Nurmikko, A.V., Mater. Res. Soc. Symp. Proc. 798, Y1.8 (2004).Google Scholar
[6] Tavernier, P. R., Margalith, T., Williams, J., Green, D. S., Keller, S., Denbaars, S. P., Mishra, U. K., Nakamura, S., and Clarke, D. R., J. Cryst. Growth 264, 150 (2004).Google Scholar
[7] Han, J., Waldrip, K. E., Lee, S. R., Figiel, J. J., Hearne, S. J., Petersen, G. A., and Myers, S. M., Appl. Phys. Lett. 78, 67 (2000).Google Scholar
[8] Han, J., Jeon, S.-R., Gherasimova, M., Su, J., Cui, G., Peng, H., Makarona, E., He, Y., Song, Y.-K., Nurmikko, A. V., Zhou, L., Goetz, W., and Krames, M., Proceedings of SPIE, 5530, 61 (2004).Google Scholar
[9] Ramachandran, V., Feenstra, R. M., Sarney, W. L., Salamanca-Riba, L., Northrup, J. E., Romano, L. T., and Greve, D. W., Appl. Phys. Lett. 75, 808 (1999).Google Scholar