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Growth and Structure of Metallic Barrier Layers and Interconnect Films II: Atomistic Simulations of Film Deposition onto Inclined Surfaces

Published online by Cambridge University Press:  10 February 2011

J. Dalla Torre
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA LPST, ESA5477-CNRS, Université Paul Sabatier and LAAS-CNRS, 31077 Toulouse, France
G. H. Gilmer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
D. L. Windt
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
F. H. Baumann
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA
R. Kalyanaraman
Affiliation:
Oak Ridge National Labs, Oak Ridge, Tennessee, 37831, USA
Hanchen Huang
Affiliation:
Lawrence Livermore National Laboratory, Livermore, California 94550, USA
T. Díaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore, California 94550, USA
M. Djafari Rouhani
Affiliation:
LPST, ESA5477-CNRS, Université Paul Sabatier and LAAS-CNRS, 31077 Toulouse, France
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Abstract

We present three dimensional lattice Monte Carlo simulations of sputter deposition onto inclined surfaces. For this purpose, we use a model of an fcc material and we vary the substrate inclination, the texture, and the atomic mobility. In this way we can examine different conditions and mechanisms involved in depositing barrier layer and interconnect films. We obtain results on the density and the roughness of the films. We find that the film texture has dramatic effects on the film density and smoothness. Surprisingly, we find that the surface diffusion coefficients may not be critical parameters; changes in the coefficients by several orders of magnitude may cause only a small change in the film morphology when depositing onto non-wetting substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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