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Growth and Properties of Bulk Single Crystals of GaN

Published online by Cambridge University Press:  21 February 2011

T. Suski ,
P. Perlin ,
M. Leszczyński ,
H. Teisseyre ,
I. Grzegory ,
J. Jun ,
M. Boćkowski ,
S. Porowski ,
K. Pakuła  and
A. Wysmołek
...Show all authors
T. Suski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
P. Perlin
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
M. Leszczyński
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
H. Teisseyre
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
I. Grzegory
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
J. Jun
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
M. Boćkowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
S. Porowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected]
K. Pakuła
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
A. Wysmołek
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
J.M. Baranowski
Affiliation:
UNIPRESS, High Pressure Research Center, 01-142 Warszawa, POLAND, [email protected]; [email protected] Institute of Experimental Physics, Warsaw University, 00-681 Warszawa, POLAND
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Abstract

In this paper we review recent developments in the growth of bulk GaN crystals by a high-pressure, high-temperature method. We also provide information on various physical properties of bulk GaN material. Then, some preliminary results on the homoepitaxial growth of GaN are given. In the second part of this paper we discuss the following problems: the possible origin of the large free electron concentration in undoped GaN material, the parasitic effect of yellow luminescence and the nature of Zn- and Mg-acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 15
Copyright
Copyright © Materials Research Society 1996

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References

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