Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-26T15:16:19.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and physical properties of vanadium oxide thin films with controllable phases

Published online by Cambridge University Press:  05 April 2013

Yanda Ji ,
Yin Zhang ,
Min Gao ,
Zhen Yuan ,
Changqing Jin  and
Yuan Lin
Yanda Ji
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China
Yin Zhang
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China
Min Gao
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China
Zhen Yuan*
Affiliation:
The Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, P. R. China
Changqing Jin
Affiliation:
The Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, P. R. China
Yuan Lin*
Affiliation:
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China
*
*Email: [email protected]
Get access

Abstract

Vanadium oxides thin films with variable oxidation states have attracted great attention due to their unique electrical, optical properties and many important applications in microelectronics, infrared optical devices, and energy harvest systems. However, to fabricate vanadium oxide thin films with controllable phases and desired transport properties is still a challenge by using a chemical solution deposition (CSD) technique. In this paper, we report that vanadium oxide thin films with well controlled phases such as rhombohedral V2O3 and monoclinic VO2 could be synthesized on Al2O3 (0001) substrates using a CSD technique ---- polymer assisted deposition (PAD). Both V2O3 and VO2 thin films can be well controlled with good epitaxial quality by optimizing the fabrication parameters. The electrical resistivity changes 3∼4 orders of magnitude at metal insulator transition for both epitaxial V2O3 and VO2 thin films. The correlation between the physical properties and the microstructures of the films will be discussed.

Keywords

thin filmepitaxyphase transformation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1547: Symposium M – Solution Synthesis of Inorganic Functional Materials—Films, Nanoparticles and Nanocomposites , 2013 , pp. 21 - 27
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

Rodolakis, F., Hansmann, P., Rueff, J. P., Toschi, A., Haverkort, M. W., Sangiovanni, G., Tanaka, A., Saha-Dasgupta, T., Andersen, O. K., Held, K., Sikora, M., Alliot, I., Itie, J. P., Baudelet, F., Wzietek, P., Metcalf, P. and Marsi, M., Phys. Rev. Lett. 104, 047401 (2010).CrossRefGoogle Scholar
Goldflam, M. D., Driscoll, T., Chapler, B., Khatib, O., Jokerst, N. M., Palit, S., Smith, D. R., Kim, B. J., Seo, G., Kim, H. T., Di Ventra, M. and Basov, D. N., Appl. Phys. Lett. 99, 044103 (2010).CrossRefGoogle Scholar
Huang, Z. L., Chen, S. H., Lv, C. H., Huang, Y. and Lai, J. J., Appl. Phys. Lett. 101, 191905 (2012).CrossRefGoogle Scholar
Yan, C. Z., Chen, Z., Peng, Y. T., Guo, L. and Lu, Y. F., Nanotechnology 23, 475701 (2012).CrossRefGoogle Scholar
Guo, H., Chen, K., Oh, Y., Wang, K., Dejoie, C., Asif, S. A. S., Warren, O. L., Shan, Z. W., Wu, J. and Minor, A. M., Nano Lett. 11, 3207 (2011).CrossRefGoogle Scholar
Weber, C., O'Regan, D. D., Hine, N. D. M., Payne, M. C., Kotliar, G. and Littlewood, P. B., Phys. Rev. Lett. 108, 256402 (2012).CrossRefGoogle Scholar
Zou, G. F., Zhao, J., Luo, H. M., McCleskey, T. M., Burrell, A. K. and Jia, Q. X., Chem. Soc. Rev. 42, 439 (2013).CrossRefGoogle Scholar
Gao, B. J., An, F. Q. and Liu, K. K., Appl. Sur. Sci. 253, 1946 (2006).CrossRefGoogle Scholar
Ji, Y. D., Pan, T. S., Bi, Z., Liang, W. Z., Zhang, Y., Zeng, H. Z., Wen, Q. Y., Zhang, H. W., Chen, C. L., Jia, Q. X. and Lin, Y., Appl. Phys. Lett. 101, 071902 (2012).CrossRefGoogle Scholar