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Growth and Morphology of Pentacene Films on Oxide Surfaces
Published online by Cambridge University Press: 15 March 2011
Abstract
Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: a first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the thin film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.
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- Copyright © Materials Research Society 2002