Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:47:10.565Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4

Published online by Cambridge University Press:  31 January 2011

Mihaela Popovici ,
Sven Van Elshocht ,
Nicolas Menou ,
Johan Swerts ,
Dieter Pierreux ,
Annelies Delabie ,
Karl Opsomer ,
Bert Brijs ,
Gerrit Faelens  and
Alexis Franquet
...Show all authors
Mihaela Popovici
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Sven Van Elshocht
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Nicolas Menou
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Johan Swerts
Affiliation:
[email protected], ASM Belgium, Heverlee, Belgium
Dieter Pierreux
Affiliation:
[email protected], ASM Belgium, Heverlee, Belgium
Annelies Delabie
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Karl Opsomer
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Bert Brijs
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Gerrit Faelens
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Alexis Franquet
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Thierry Conard
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Jan Maes
Affiliation:
[email protected], ASM Belgium, Heverlee, Belgium
Dirk Wouters
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Jorge Kittl
Affiliation:
[email protected], IMEC vzw, Heverlee, Belgium
Get access

Abstract

Strontium titanate (STO) thin films (45-67 % Sr) were deposited by atomic layer deposition using Sr(tBu3Cp)2/Ti(OMe)4/H2O as precursors. The Sr content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering spectroscopy (RBS). The amount of Sr and Ti deposited depends on the Sr:Ti pulse ratio and indicates the enhancement of the Ti precursor reactivity in the presence of Sr-OH. STO compositions that are closer to stoichiometric SrTiO3 result in denser films with correspondingly higher index of refraction. The increase (decrease) of the Sr content over (below) 50 % leads to an expansion (contraction) of the lattice parameter corresponding to cubic SrTiO3 with a perovskite structure. The dielectric constant (extracted from film thickness series) and leakage current strongly depends both on the Sr content and the crystalline state of the films.

Keywords

atomic layer depositiondielectricorganometallic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C08-03
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kil, D.-S., Lee, J.-M., and Roh, J.-S., Chem.Vapor Depos. 8, 195 (2002).Google Scholar
2 Kosola, A., Putkonen, M., Johansson, L.-S., and Niinisto, L., Appl. Surf. Sci. 211, 102 (2003).Google Scholar
3 Kwon, O. S., Kim, S. K., Cho, M., Hwang, C. S., and Jeong, J., J. Electrochem. Soc. 152, C229 (2005).Google Scholar
4 Kwon, O. S., Lee, S. W., Ham, J. H., ad Hwang, C. S., J. Electrochem. Soc. 154, G127 (2007).Google Scholar
5 Ahn, J. H., Kang, S. W., Kim, J. Y., Kim, J. H., and Roh, J. S., J. Electrochem. Soc. 155, G185 (2008).Google Scholar
6 Lee, S.W., Han, J. H., Kwon, O.S., and Hwang, C.S., J. Electrochem. Soc. 155, G253 (2008).Google Scholar
7 Lee, S.W., Kwon, O.S., Han, J. H., and Hwang, C.S., Appl. Phys. Lett. 92, 222903 (2008).Google Scholar
8 Bhaskar, S., Allgeyer, D., and Smythe, J. A. III, Appl. Phys. Lett. 89, 254103 (2008).Google Scholar
9 Vehkamäki, M., Hatanpää, T., Hänninen, T., Ritala, M. and Leskel, M.ä, Electrochem. Solid-State Lett., 2, 504 (1999).Google Scholar
10 Vehkamaki, M., Hanninen, T., Ritala, M., Leskela, M., Sajavaara, T., Rauhala, E., and Keinonen, J., Chem.Vapor Depos. 7, 75 (2001).Google Scholar
11 Rahtu, A., Hanninen, T., and Ritala, M., J. Phys. IV, 11, 923 (2001).Google Scholar
12 Vehkamaki, M., PhD Thesis, University of Helsinki, 2007.Google Scholar
13 Hatanpaa, T., Ritala, M., and Leskela, M., J. Organomet. Chem. 692, 5256 (2007).Google Scholar
14PULSAR 3000 is a trademark of ASM International.Google Scholar
15 Clima, S., Pourtois, G., Menou, N., Popovici, M., Rothschild, A., Kaczer, B., Van Elshocht, S., Wang, X., Swerts, J., Pierreux, D., De Gendt, S., Wouters, D., and J.Kittl, A., to be published.Google Scholar