Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-20T00:21:18.911Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Evaluation of Magnetoelectric Cr2O3 Single Crystal Thin Films

Published online by Cambridge University Press:  01 February 2011

Nobuyuki Iwata ,
Takeshi Asada ,
Shunpei Ootsuki  and
Hiroshi Yamamoto
Nobuyuki Iwata
Affiliation:
[email protected], College of Science & Technology, Nihon University, Electronics & Computer Science, 7-24-1 Narashinodai, Funabashi-shi, Chiba, 274-8501, Japan, +81-47-469-5457, +81-47-469-5457
Takeshi Asada
Affiliation:
[email protected], College of Science & Technology, Nihon University, Electronics & Computer Science, 7-24-1 Narashinodai, Funabashi-shi, Chiba, 274-8501, Japan
Shunpei Ootsuki
Affiliation:
[email protected], College of Science & Technology, Nihon University, Electronics & Computer Science, 7-24-1 Narashinodai, Funabashi-shi, Chiba, 274-8501, Japan
Hiroshi Yamamoto
Affiliation:
[email protected], College of Science & Technology, Nihon University, Electronics & Computer Science, 7-24-1 Narashinodai, Funabashi-shi, Chiba, 274-8501, Japan
Get access

Abstract

The Cr2O3 thin films were grown on Al2O3(1102)(r-cut sapphire), Al2O3(1120)(a-cut sapphire), and Al2O3(0001)(c-cut sapphire) substrates to apply magnetoelectric oxides to oxides electronics. The Cr2O3 is a representative magnetoelectric material with antiferromagnetic insulator with the Néel temperature of 308 K. From the results of X-ray diffraction and the reflection high energy electron diffraction, epitaxial Cr2O3 thin films were obtained on all cut sapphire substrates using off-axis DC-RF magnetron sputtering method. The epitaxial relationship was Cr2O3[1120]//Al2O3[1120] and Cr2O3(1102)//Al2O3(1102) on r-cut, and Cr2O3[1100]//Al2O3[1100] and Cr2O3(1120)//Al2O3(1120) on a-cut, and Cr2O3[1120]//Al2O3[1120] and Cr2O3(0001)//Al2O3(0001) on c-cut. Optimized Cr2O3 film was obtained grown at 600°C on c-cut sapphire substrate. The surface roughness (Ra) of the film was 0.28 nm, and full width at half maximum of rocking curve for Cr2O3(0006) Bragg reflection was 0.23°. Growth difference is expected to be caused by the stacking order of atoms normal to the substrate surface and arrangement of atoms of the substrate surface.

Keywords

crystal growthRHEEDscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-67
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fiebig, M., Eremenko, V. V. and Chupis, I. E. (ed), Magnetoelectric Interaction Phenomena in Crystals (Kluwer Academic Publishers, The Netherlans, 2003).Google Scholar
2. Fiebig, M., J. Phys. D: Appl. Phys. 38, R123 (2005)Google Scholar
3. Borisov, P., Hochstrat, A., Chen, X., Kleemann, W., and Binek, C., Phys. Rev. Lett. 94, 117203 (2005).Google Scholar
4. Iwata, N., Asada, T., Nagase, K., Yamada, T. and Yamamoto, H., Physica C 463–465, 1005 (2007).Google Scholar
5. Hornreich, R. and Shtrikman, S., Phys. Rev. 161, 506 (1967).Google Scholar
6. Wang, J., Neaton, J. B., Zheng, H., Nagarajan, V., Ogale, S. B., Liu, B., Viehlnand, D., Vaithyanathan, V., Schlom, D. G., Waghmare, U. V., Spaldin, N. A., Rabe, K. M., Wuttig, M. and Ramesh, R., Science 299, 1719 (2003).Google Scholar
7. Ternon, C., Thery, J., Baron, T., Ducros, C., Sanchette, F. and Kreisel, J., Thin Solid Films 515, 481 (2006).Google Scholar
8. Suzuki, T., Hishita, S., Oyoshi, K., and Souda, R., Surf. Sci. 437, 289 (1999).Google Scholar