Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:48:27.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Doping of AlxGa1−xN Deposited Directly on α(6H)-SiC(0001) Substrates via Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

M.D. Bremser ,
W.G. Perry ,
N.V. Edwards ,
T. Zheleva ,
N. Parikh ,
D.E. Aspines  and
R.F. Davis
M.D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
W.G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
N.V. Edwards
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
T. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC.
D.E. Aspines
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC .
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
Get access

Abstract

Monocrystalline AlxGa1−xN(0001) (0.05 ≤ x ≤ 0.70) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grown at high temperatures via OMVPE directly on vicinal and on-axis α(6H)-SiC(0001) wafers using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. The surface morphologies were smooth and die densities and distributions of dislocations were comparable to that observed in GaN(0001) films grown on high temperature A1N buffer layers. Double-crystal XRC measurements showed a FWHM value as low as 186 arc sec for the (0002) reflection. Spectra obtained via CL showed strong near band-edge emissions with FWHM values as low as 31 meV. The compositions of the AlxGa1−xN films were determined using EDX, AES and RBS and compared to the values of the bandgap as measured by spectral ellipsometry and CL emissions. A negative bowing parameter was found. Controlled n-type, Si-doping of AlxGa1−xN for x ≤ 0.4 has been achieved with net carrier concentrations ranging from ≈ 2 × 1017 cm−3 to 2 × 1019 cm−3. Acceptor doping with Mg for x < 0.13 was also successful.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Khan, M.A., Kuznia, J.N., Olson, D.T. and Kaplan, R., J. Appl. Phys., 73, 3108 (1993).Google Scholar
2 Amano, H., Akasaki, I., Hiramatsu, K., Koide, N. and Sawaki, N., Thin Solid Films, 163, 415 (1988).Google Scholar
3 Kuznia, J.N., Khan, M.A., Olson, D.T., Kaplan, R. and Freitas, J., J. Appl. Phys., 73, 4700 (1993).Google Scholar
4 Nakamura, S., Jpn. J. Appl. Phys., 30, L1705 (1991).Google Scholar
5 Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Carlson, E.P., Perry, W.G., Davis, R.F., Appl. Phys. Lett., 67, 401 (1995)Google Scholar
6 Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Perry, W.G., Carlson, E.P., Piner, E.L., El-Masry, N.A., Davis, R.F., J. Mat. Res. to be published.Google Scholar
7 Davis, R.F. Weeks, T.W. Jr., Bremser, M.D., Ailey, K.S., Perry, W.G., Sitar, Z., Wang, C. and Linthicum, K., Topical Workshop on III-V Nitrides, Nagoya, Japan, September 21-23 (1995).Google Scholar
8 Cree Research, Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713Google Scholar
9 Weeks, T.W. Jr., Kum, D.W., Carlson, E., Perry, W.G., Ailey, K.S. and Davis, R.F., Second International High Temperature Electronics Conference, Charlotte, NC, June 5-10 (1994).Google Scholar
10 Khan, M.R.H., Koide, Y., Itoh, H., Sawaki, N., Akasaki, I., Solid State Commun. 60, 753, (1986).Google Scholar
11 Baranov, B.V., Gutan, V.B Zhumakulev, U., Sov. Phys.-Semicond, 16, 819, (1982).Google Scholar
12 Dingle, R. and Begems, M., Solid State Commun., 9,175 (1971).Google Scholar
13 Götz, W., Johnson, N.M., Street, R.A., Amano, H. and Akasaki, I., Appl. Phys. Lett. 66, 1340 (1995).Google Scholar