Published online by Cambridge University Press: 25 February 2011
Growth characteristics and device applications of heteroepitaxial insulator/semiconductor structures are reviewed. Discussions are made on both fluoride insulators such as CaF2, SrF2, BaF2, LaF3, CeF3, etc. and oxide insulators such as MgOAl2O3, CeO2, ZrO2, (Ba,Sr)O, SrTiO3, etc. First, the growth methods and typical results on the crystalline quality of the films are mainly discussed. In some cases, growth characteristics of semiconductor overlayers on the insulator / semiconductor structures are also discussed. Finally, applications of these structures to future electron devices are reviewed.