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Growth and Characterization of Ti3PSe4 Single Crystals

Published online by Cambridge University Press:  25 February 2011

N. B. Singh ,
R. H. Hopkins ,
R. Mazelsky  and
M. Gottlieb
N. B. Singh
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235
R. H. Hopkins
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235
R. Mazelsky
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235
M. Gottlieb
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235
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Abstract

Good quality single crystals of Ti3PSe4 were grown from the melt by the Bridgman technique following improvements in the method of purifying the parent components, and optimization of growth parameters. Crack-free crystals 8 cm in length and 17 mm in diameter were produced.

The quality of the crystals was evaluated by optical transmittance and metallographic techniques. In the range 0.7 to 14 μm the optical transmittance shows elimination of absorption bands exhibited in crystals grown without special purification steps. Etchpit studies showed that the crystals were free from inclusions and lamellar twins and that they show a uniform cross sectional etch pit density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 119
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

Shay, J. L. and Wernick, J. H., ‘Ternary chalcopyrite semiconductors, growth, electronic properties and applications’ (Pergamon Press, NY, 1975).Google Scholar
2. Feigelson, R. S. and Route, R. K., J. Crystal Growth 49 p. 261, (1980).CrossRefGoogle Scholar
3. Singh, N. B., Hopkins, R. H., Mazelsky, R., Gaida, W., Lemmon, D. H., Feichtner, J.D. and Mazelsky, R., Mater. Letter 4 p. 21 (1985).Google Scholar
4. Gottlieb, M., Isaacs, T. J., Feichtner, J. D. and Roland, G. W., J. Appl. Physics 45 p. 5145 (1974).Google Scholar
5. Singh, N. B., Hopkins, R.H. and Mazelsky, R., J. Crystal Growth (to be communicated).Google Scholar
6. Singh, N. B., Gould, T. and Hopkins, R. H., J. Crystal Growth 78 p. 43 (1986).Google Scholar
7. Fritz, I., Isaacs, T. J., Gottlieb, M., and Morosin, B., Solid State Communications 27 p. 535 (1978).CrossRefGoogle Scholar