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Growth and Characterization of Layered Structures of Silicon Carbide and Aluminum Nitride

Published online by Cambridge University Press:  25 February 2011

B. S. Sywe ,
Z. J. Yu ,
J. H. Edgar  and
J. Chaudhuri
B. S. Sywe
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506.
Z. J. Yu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506.
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506.
J. Chaudhuri
Affiliation:
Mechanical Engineering Department, The Wichita State University, Wichita, KS 67208.
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Abstract

Heterostructures of SiC and AlN in either sequence, AlN on SiC or SiC on AlN, were grown on Si, Al2O3, and 6H-SiC substrates by (metalorganic) chemical vapor deposition (CVD). On Si substrates, a SiC layer was first grown by a two-step technique and an AlN layer was deposited subsequently. On other substrates, an AlN layer was first grown, followed by SiC deposition. Multi-layered structures (SiC/AlN/SiC) were also produced to demonstrate the ability of heteroepitaxy of SiC and AlN on each other.

AlN grown on 3C-SiC were highly oriented polycrystalline films. AlN films on 6H-SiC, SiC films on A1N/Al2O3, and SiC films on AlN/6H-SiC were single crystal. In the latter two cases, the SiC films were in hexagonal structure. These SiC films were smooth and specular in appearance and showed n-type conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 787
Copyright
Copyright © Materials Research Society 1993

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References

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