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Growth and characterization of Ge nanostructures on Si(111)

Published online by Cambridge University Press:  17 March 2011

F. Rosei ,
N. Motta ,
A. Sgarlata  and
A. Balzarotti
F. Rosei
Affiliation:
Institute of Physics and Astronomy and CAMP, University of Århus, 8000 C Århus, Denmark Unità INFM and Dipartimento di Fisica, Via della Ricerca Scientifica n.1, 00133 Roma, Italy
N. Motta
Affiliation:
Unità INFM and Dipartimento di Fisica, Via della Ricerca Scientifica n.1, 00133 Roma, Italy
A. Sgarlata
Affiliation:
Unità INFM and Dipartimento di Fisica, Via della Ricerca Scientifica n.1, 00133 Roma, Italy
A. Balzarotti
Affiliation:
Unità INFM and Dipartimento di Fisica, Via della Ricerca Scientifica n.1, 00133 Roma, Italy
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Abstract

Scanning Probe Microscopy (SPM) in situ is used to study the evolution of Ge islands grown by Physical Vapor Deposition on Si(111) 7×7 reconstructed surfaces. Large 3D islands form on the Wetting Layer (WL), with average lateral dimension in the range 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, partially relaxed and ripened (atoll-like) islands. We measured the contact angles of the island facets, and observed the depletion of the substrate around the ripened islands. These features are attributed to the misfit strain, which is partially relieved by interdiffusion of Si into the Ge layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.9
Copyright
Copyright © Materials Research Society 2002

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