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Growth and Characterization of Chemically Vapor Deposited Beta-Sic Epilayers on 6H Alpha-Sic Substrates

Published online by Cambridge University Press:  26 February 2011

H. S. Kong ,
J. T. Glass ,
R. F. Davis  and
S. R. Nutt
H. S. Kong
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695–7907
J. T. Glass
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695–7907
R. F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695–7907
S. R. Nutt
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
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Abstract

High quality, β-SiC (111) monocrystalline films have been epitaxially grown via chemical vapor deposition at 1683K on hexagonal 6H αc-SiC (0001) using a (SiH4 + C2H4)/(H2) gas flow rate ratio of 1:3000. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the film/substrate interface and a low density within the bulk of the film. Furthermore, high resolution transmission electron microscopy revealed a coherent β-SiC/α-SiC interface. Secondary ion mass spectrometry indicated that the diffusion of the Al in the substrate into the as-grown film was negligible. Unintentionally doped films are n-type with the carrier concentrations virtually always in the range of 1016-1017cm3, as determined by capacitance-voltage measurements. A gold-β-SiC Schottky diode having an ideality constant of approximately 1.6 was fabricated on the β-SiC epilayer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 405
Copyright
Copyright © Materials Research Society 1987

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References

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