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Growth and Characterization of a-plane In0.2Ga0.8N/ GaN hetrostructures on r-Sapphire

Published online by Cambridge University Press:  19 December 2014

Shruti Mukundan ,
Lokesh Mohan ,
Greeshma Chandan ,
Basanta Roul  and
S.B.Krupanidhi
Shruti Mukundan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India.
Lokesh Mohan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India.
Greeshma Chandan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India.
Basanta Roul
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India. Central Research Laboratory, Bharat Electronics, Bangalore, India
S.B.Krupanidhi*
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India.
*
*E-mail: [email protected]
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Abstract

Non-polar a-plane InGaN films were grown on a r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The growth temperature and Indium flux were varied to optimize the desired composition of In0.23Ga0.77N on the (11-20) a-plane GaN epilayer grown on a (1-102) r-plane sapphire substrate. The structural, morphological and optical properties of the optimized composition have been studied. It was found that highly a-axis oriented InGaN epilayers with no phase separation can be grown at 540 °C with In/Ga flux ratio of 0.72. The composition of indium incorporation in single phase InGaN films was found to be 23% as estimated by high resolution X-ray diffraction. The room temperature band gap energy of single phase InGaN layers was determined by photoluminescence measurement and found to be around 2.56 eV.

Keywords

III-Vmolecular beam epitaxy (MBE)nitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t11-03
Copyright
Copyright © Materials Research Society 2014 

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References

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