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Group III Metal Clusters on (001) III-V Compound Semiconductors

Published online by Cambridge University Press:  15 February 2011

S. Puddephatt  and
T.D. Lowes
S. Puddephatt
Affiliation:
The University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A 3K7
T.D. Lowes
Affiliation:
The University of Western Ontario, Department of Physics, London, Ontario, Canada, N6A 3K7
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Abstract

The interaction of group III Metal clusters with the underlying III-V compound semiconductor substrate is examined. Specifically, both In and Ga on InP and GaAs (001) are discussed. Two Methods of obtaining an excess concentration of the group III Metal are treated: thermal decomposition in UHV where preferential group V dissociation and vaporization leaves a supersaturation of metal and Knudsen cell deposition in an MBE system. It is shown that the resulting morphologies for all cases are attributable to significant cluster/substrate interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 143
Copyright
Copyright © Materials Research Society 1994

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References

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