Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T17:54:04.712Z Has data issue: false hasContentIssue false
  • English
  • Français

Green Emission from Er-Doped AlN Thin Films Prepared by RF Magnetron Sputtering

Published online by Cambridge University Press:  14 March 2011

V. I. Dimitrova ,
F. Perjeru ,
Hong Chen  and
M. E. Kordesch
V. I. Dimitrova
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
F. Perjeru
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
Hong Chen
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
M. E. Kordesch
Affiliation:
Physics & Astronomy Department, and Condensed Matter & Surface Science Program, Ohio University, Clippinger Labs, Rm. 251 Athens, OH 45701, U.S.A.
Get access

Abstract

Thin films of Er doped AlN, ∼ 200 nm thick, were grown on indium tin oxide/aluminum titanium oxide/glass substrates using RF magnetron sputtering in a pure nitrogen atmosphere. To optically activate Er all films were subject to post-deposition annealing in flowing nitrogen atmosphere at atmospheric pressure at temperatures between 1023-1223 K for 10-60 minutes. The visible cathodoluminescence (CL) in the green was detected at both 11 K and 300K. The strongest CL peaks were observed at 558 nm and 537 nm (11 K), which correspond to the transitions from 4S3/2 and 2H11/2 to the 4I15/2 ground level. Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. The turn-on voltage was found to be around 80-100 V for our ACTFEL devices. The intensity of the EL emission rapidly increases with the voltage increasing in the investigated range of 110-130 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q5.4.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ballato, J., Lewis, J. S. III, Holloway, P., MRS Bulletin, 24, 51 (1999).Google Scholar
2. Kim, S., Rhee, S. J., Tumbull, D. A., Li, X., Coleman, J. J., Bishop, S. G., Klein, B., Appl. Phys. Lett., 71, 2662 (1997).Google Scholar
3. Steckl, A. J. and Birkhahn, R., Appl. Phys. Lett., 73, 1700 (1998).Google Scholar
4. Lozykowski, H. J., Jadwisienczak, W. M. and Brown, I., Appl. Phys. Lett., 74, 1129 (1999).Google Scholar
5. Birkhahn, R., Garter, M. and Steckl, A. J., Appl. Phys. Lett., 74, 2161 (1999).Google Scholar
6. Lozykowski, H. J., Jadwisienczak, W. M. and Brown, I., Appl. Phys. Lett., 76, 861 (2000).Google Scholar
7. Steckl, A. J., Garter, M., Birkhahn, R. and Scofield, J., Appl. Phys. Lett., 73, 2450 (1998).Google Scholar
8. Steckl, A. J., Garter, M., Lee, D. S., Heikenfeld, J. and Birkhahn, R., Appl. Phys. Lett., 75, 2184 (1999).Google Scholar
9. Gurumurugan, K., Chen, Hong, Harp, G. R., Jadwisienczak, W. M. and Lozykowski, H. J., Appl. Phys. Lett., 74, (3008) 1999.Google Scholar