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Graphitic Schottky Contacts to Si formed by Energetic Deposition

Published online by Cambridge University Press:  07 October 2015

Mohammad Saleh N Alnassar ,
Patrick W. Leech ,
Geoff K. Reeves ,
Anthony S. Holland ,
Desmond W. M. Lau ,
Dougal G. McCulloch ,
Hiep N. Tran  and
Jim G. Partridge
Mohammad Saleh N Alnassar
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Patrick W. Leech
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Geoff K. Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Anthony S. Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Desmond W. M. Lau
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Dougal G. McCulloch
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
Hiep N. Tran
Affiliation:
Centre of Technology, RMIT University, Hồ Chí Minh City, Vietnam.
Jim G. Partridge
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne VIC 3001, Australia
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Abstract

Carbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.

Keywords

CSielectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1786: Symposium T – Graphene and Carbon Nanotubes , 2015 , pp. 51 - 56
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Chen, C.-C., Aykol, M., Chang, C.-C., Levi, A. F. J., and Cronin, S. B., Nano Lett. 11, 1863 (2011).CrossRefGoogle Scholar
Song, Yi, Li, X., Mackin, C., Zhang, X., Fang, W., Palacios, T., Zhu, H. and Kong, J., In press Nano Lett., (2015).Google Scholar
Kreupl, F., Mater. Res. Soc. Symp. Proc. 1303, 3 (2011).CrossRefGoogle Scholar
Tongay, S., Schumann, T., and Hebard, A.F., Appl. Phys. Letts. 95, 222103 (2009).CrossRefGoogle Scholar
Yim, C., Rezvani, E., Kumar, S., McEvoy, N. and Duesberg, G.S., Phys. Status Solidi. B 249, 2553 (2012).CrossRefGoogle Scholar
Ismail, R.A., Hamoudi, W.K. and Saleh, K.K., Materials Science in Semiconductor Processing 21, 194 (2014).CrossRefGoogle Scholar
Gupta, R.K., Ghosh, K. and Kahol, P.K., Microelectron.Eng. 87, 221 (2010).CrossRefGoogle Scholar
Lau, D.W.M., McCulloch, D.G., Taylor, M.B., Partridge, J.G., McKenzie, D.R., Marks, N.A., Teo, E.H.T. and Tay, B. K., Phys. Rev. Lett. 100, 176101 (2008).CrossRefGoogle Scholar
Lau, D.W.M., Moafi, A., Taylor, M.B., Partridge, J.G., McCulloch, D.G., Powles, R.C., McKenzie, D.R., Carbon 47, 3263 (2009).CrossRefGoogle Scholar
Lau, D.W.M., Partridge, J.G., Taylor, M.B., McCulloch, D.G., Wasyluk, J., Perova, T.S., McKenzie, D.R., J. Appl. Phys. 105, 084302 (2009)CrossRefGoogle Scholar
Kracica, M., Partridge, J.G., McCulloch, D.G., Leech, P.W., Holland, A.S. and Reeves, G.K., Mater. Res. Soc. Symp. Proc. 1693 (2014).CrossRefGoogle Scholar
Godfrey, R. B. and Green, M. A., Appl. Phys. Lett. 34, 790–793 (1979).CrossRefGoogle Scholar