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Grain Growth Kinetics in Microcrystalline Materials

Published online by Cambridge University Press:  15 February 2011

V. G. Sursaeva*
Affiliation:
Institute of Solid State Physics, Russian Academy of Sciences, Laboratory of Interfaces in Metals, Chernogolovka, Russia.
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Abstract

Certain experimental results are presented concerning grain growth in microcrystalline Ag films. Dark field TEM technique was used for the measurement of grain size, trijunction velocity and grain boundary mobility. We found that the activation energy for trijunction motion is 25.0 kJ/g.atom, and the activation energy for the grain boundary motion is 50.0 kJ/g.atom.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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