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Grain Growth Behavior During Microwave Annealing of Silicon Nitride

Published online by Cambridge University Press:  10 February 2011

M. Hirota ,
M. E. Brito ,
K. Hirao ,
K. Watari ,
M. Toriyama  and
T. Nagaoka
M. Hirota
Affiliation:
Proposal-based Advanced Industrial Technology R & D Program Office, Industrial Technology Department, New Energy and Industrial Technology Development Organization (NEDO), 28th Floor, Sunshine 60 Bldg., 1-1 Higashi-Ikebukuro 3-chome, Toshima-ku, Tokyo 170, JAPAN
M. E. Brito
Affiliation:
National Industrial Research Institute of Nagoya, I-1 Hirate-cho, Kita-ku Nagoya, Aichi 462, JAPAN
K. Hirao
Affiliation:
National Industrial Research Institute of Nagoya, I-1 Hirate-cho, Kita-ku Nagoya, Aichi 462, JAPAN
K. Watari
Affiliation:
National Industrial Research Institute of Nagoya, I-1 Hirate-cho, Kita-ku Nagoya, Aichi 462, JAPAN
M. Toriyama
Affiliation:
National Industrial Research Institute of Nagoya, I-1 Hirate-cho, Kita-ku Nagoya, Aichi 462, JAPAN
T. Nagaoka
Affiliation:
National Industrial Research Institute of Nagoya, I-1 Hirate-cho, Kita-ku Nagoya, Aichi 462, JAPAN
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Abstract

A comparative study of grain growth behavior in silicon nitride under conventional and microwave annealing is presented. Microwave annealed specimens showed a faster growth rate as indicated by the quantitative microstructural analysis. The phenomenon was used in combination with seeding techniques to develop a silicon nitride exhibiting a bi-modal microstructure. Microwave annealing was carried out using a microwave radiation frequency of 28 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996 , 441
Copyright
Copyright © Materials Research Society 1996

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References

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