Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:03:31.560Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Boundary States in Float-Zone-Si-Bicrystals

Published online by Cambridge University Press:  22 February 2011

G. Petermann  and
P. Haasen
G. Petermann
Affiliation:
Institut f. Metallphysik, Universität Göttingen, and SFB 126, Hospitalstr. 3-5, D-3400 Göttingen, F. R. Germany
P. Haasen
Affiliation:
Institut f. Metallphysik, Universität Göttingen, and SFB 126, Hospitalstr. 3-5, D-3400 Göttingen, F. R. Germany
Get access

Abstract

A near Σ25 grain boundary has been studied electrically in FZ-silicon at various degrees of n-doping. The boundary is electrically active without previous heat treatment. A unique density-of-states can be derived from dc and ac measurements at all dopings and temperatures investigated. The model of the charged g.b. includes potential fluctuations in the g.b. plane. Admittance spectroscopy allows to differentiate between g.b. states and deep centers its the compensating space charge zone.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 65
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, X. J., Szkielko, W. and Haasen, P., J. de Phys. C 1, 135 (1982).Google Scholar
2. Szkielko, W. and Petermann, G. in Poly-microcrystaI ine and Amorphous Semiconductors, edit. by P., Pinard and S., Kalbitzer (Les Edit. De Physique, Paris, 1985) p. 379.Google Scholar
3. Grovenor, C. R. M., J. Phys. C 18, 4079 (1985).Google Scholar
4. Stützler, F. J.and Queisser, H. J., J. Appl. Phys. 60. 3910 (1986).Google Scholar
5. Broniatowski, A., Phys. Rev. (1986) in press.Google Scholar
6. Matakura, J., Jap. Jl. Appl. Phys. 2, 91 (1963).Google Scholar
7. Pike, G. E. and Seager, C. H., J. Appl. Phys. 50, 3414 (1979).Google Scholar
8. Thomson, D. J. and Card, H. C., J. Appl. Phys. 54, 1976 (1983)Google Scholar
9. Nicollian, E. H. and Gotzberger, A., Bell Syst. Tech. J. 46, 1055 (1967)Google Scholar
10. Werner, J. in Polycrystalline Semiconductors, edit. by G., Harbeke (Springer, Berlin 1985) p. 76 Google Scholar
11. Blatter, G. and Greuter, F., Phys. Rev. B 33, 3952 (1986)Google Scholar
12. Rocher, A., this Symposium, next paperGoogle Scholar
13. Anterroches, C. dé and Bourret, A., Phil. Mag. A 49, 783 (1984)CrossRefGoogle Scholar
14. Petermann, G., Thesis Göttingen (1987)Google Scholar