Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T10:49:22.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Boundaries in High Thermal Conductivity Aluminum Nitride.

Published online by Cambridge University Press:  25 February 2011

Stuart Mckernan ,
M. Grant Norton  and
C. Barry Carter
Stuart Mckernan
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
M. Grant Norton
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

The benefits of AIN as a substrate material for the electronics packaging industry appear to be limited by the deleterious effects of boundaries in the polycrystalline material. Some observations on different types of boundary in AIN using several complementary techniques are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 229
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Harris, J. H. Youngman, R. A., and Teller, R. G., J. Mater. Res., 5, 1763 (1990)Google Scholar
2. McKernan, S. and Carter, C.B., Mat. Res. Soc. Symp. Proc. 167, 259 (1990)Google Scholar
3. Westwood, A. and Notis, M., Mat. Res. Soc. Symp. Proc. 167, 265 (1990)Google Scholar
4. Hagege, S., Ishida, Y., and Tanaka, S., J. de Physique, 49, C5–189 (1988)Google Scholar
5. Samples of AIN provided by Keramont Corp., Carborundum Co., and Tokuyama Soda.Google Scholar
6. Callahan, D. and Thomas, G., Proc. XII Int. Cong. Elec. Micr. (Seattle) 4, 214 (1990)Google Scholar
7. Youngman, R. A., Harris, J. H. Labun, P. A. and Graham, R. J., J. Mater. Res., 167, 271, (1990)Google Scholar
8. McKernan, S. and Carter, C.B., Proc. XII Int. Cong. Elec. Micr. (Seattle) 4, 214 (1990)Google Scholar