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Grain Boundaries In Diamond Films On Si(001)

Published online by Cambridge University Press:  10 February 2011

D. Wittorf
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
C. L. Jia
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
W. Jäger
Affiliation:
Mikrostrukturanalytik, Technische Fakultät, Universität Kiel, D-24143 Kiel, Germany
B. Grushko
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
K. Urban
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
X. Jiang
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik, D-38108 Braunschweig, Germany
M. Paul
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik, D-38108 Braunschweig, Germany
C.-P. Klages
Affiliation:
Fraunhofer-Institut für Schicht- und Oberflächentechnik, D-38108 Braunschweig, Germany
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Abstract

Grain boundaries in [001]-oriented diamond films deposited on Si(001) by microwave-assisted chemical vapor deposition have been investigated in plan-view and cross-section samples using high-resolution electron microscopy. The poly-crystalline diamond films used in this study had large fractions of [001]-oriented grains with typical lateral dimensions of 2 μm at film thicknesses beyond 10 μm. Grains with growth orientations near (001) exhibit generally small-angle orientation deviations between their crystal lattices. Small-angle grain boundaries of symmetric and asymmetric geometry with misorientation angles below 15° are investigated in both [110]- and [001]-directions. It is found that the structures of such small-angle grain boundaries can be described by a dislocation model. These grain boundaries are on average parallel to the {110}-plane and contain in many cases micro-facets parallel to {lll}-planes. Large-angle grain boundaries with tilt angles up to 40° are also observed in interconnected films of smaller thickness. In all cases structural units with large open volumes and additional second phases are not found at the grain boundaries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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