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GMR in Excess of 10% at Room Temperature and Low Magnetic Fields in Electrodeposited Cu/Co Nano-multilayer Structures

Published online by Cambridge University Press:  01 February 2011

Dinesh K. Pandya
Affiliation:
[email protected], Indian Institute of technology Delhi, Physics, Department of Physics, IIT-Delhi,, Hauz Khas, New Delhi, 110016, India, 91-11-26591346, 91-11-26581114
Priyanka Gupta
Affiliation:
[email protected], Indian Institute of Technology Delhi, Thin Film Laboratory, Department of Physics, Hauz Khas, New Delhi, 110016, India
Subhash C. Kashyap
Affiliation:
[email protected], Indian Institute of Technology Delhi, Thin Film Laboratory, Department of Physics, Hauz Khas, New Delhi, 110016, India
Sujeet Chaudhary
Affiliation:
[email protected], Indian Institute of Technology Delhi, Thin Film Laboratory, Department of Physics, Hauz Khas, New Delhi, 110016, India
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Abstract

Electrodeposition has emerged as a novel economically viable technique with large-scale production capabilities in modern day micro technologies. The current trends are to extend the potential of the electrodeposition to nano fabrication. We have successfully electrodeposited Cu/Co multilayers, exhibiting appreciably high GMR, on ITO as well as on Cu/Si substrates. Multilayer stacks with films in thickness range 1 – 10 nm were deposited. The Co layers have different mechanisms of growth on these substrates, thus resulting in different microstructure and topography of the electrodeposited films. This leads to different GMR behavior of the multilayers in both these cases. Room temperature GMR values of 15% at low fields are obtained on ITO substrate and higher values are possible on Cu/Si substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. White, R.L., IEEE Trans. Mag. 30, 346 (1994).Google Scholar
2. Liu, Q.X., Peter, L., Toth, J., Kiss, L.F., Cziraki, A., and Bakonyi, I., J. Magn. Mag. Mat. 280, 60 (2004).10.1016/j.jmmm.2004.02.031Google Scholar
3. Chassaing, E., J. Electrochem. Soc. 280, C690 (2004).Google Scholar
4. Alper, M., Schwarzacher, W., and Lane, S. J., J. Electrochem. Soc. 144, 2346 (1997).Google Scholar
5. Gupta, P., Pandya, D.K., Kashyap, S.C., and Chaudhary, S., Int. J. Nano science. 5, 505 (2006).10.1142/S0219581X0600470XGoogle Scholar
6. Peter, L, Liu, Q, Kerner, Zs, and Bakonyi, I., Electrochim. Acta. 49, 1513 (2004).Google Scholar
7. Scharifker, B. and Hills, G., Electrochim. Acta. 28, 879 (1983).10.1016/0013-4686(83)85163-9Google Scholar
8. Bakonyi, I., Peter, L., Rolik, Z., Kiss-Szabo, K., Kupay, Z., Toth, J., Kiss, L.F., and Padar, J., Phys. Rev. B 70, 054427 (2004).10.1103/PhysRevB.70.054427Google Scholar