Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-06T05:27:04.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Gettering of Impurities by Incoherent Light Annealed Porous Silicon

Published online by Cambridge University Press:  15 February 2011

V. E. Borisenko  and
A. M. Dorofeev
V. E. Borisenko
Affiliation:
Minsk Radioengineering Institute, P.Browka 6, Minsk, USSR
A. M. Dorofeev
Affiliation:
Minsk Radioengineering Institute, P.Browka 6, Minsk, USSR
Get access

Abstract

The application of electrochemically formed porous silicon to getter Cu and Au atoms in silicon crystals during incoherent light annealing for 4 to 20 sec is reported. Exposure light power density of 30 W/cm2 was used to heat the samples up to 950 °C. Improvement of lifetime related to Au and Cu gettering with porous silicon has been observed. Excess impurity interstitials and their enhanced diffusion are supposed to be responsible for the gettering effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 375
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Milnes, A. G., Deep Impurities in Semiconductors, (John Wiley & Sons, New York 1973).Google Scholar
2.Monkowski, J. R., Solid State Technol. 24, No.7, 44 (1981).Google Scholar
3.Buck, T. M., Poate, J. M., Pickar, K. A., Surf. Sci. 35, 362 (1973).Google Scholar
4.Murase, K. and Harada, H., J. Appl. Phys. 48, 4404 (1977).Google Scholar
5.Cullis, A. G., Seidel, T. E. and Meek, R. L., J. Appl. Phys. 49, 5188 (1978).Google Scholar
6.Revesz, P. et al. , J. Appl. Phys. 49, 5199 (1978).Google Scholar
7.Lo, M. J. T., Skalnik, J. G. and Ordung, P. F., J. Electrochem. Soc. 128, 1569 (1981).Google Scholar
8.Nishiyama, K., Arai, M. and Watanabe, N., Jap. J. Appl. Phys. 19, L563 (1980).Google Scholar
9.Drowley, C. and Hu, S., Appl. Phys. Lett. 38, 876 (1981).Google Scholar
10.Powell, R. A., Jep, T. O. and Fulks, R. T., Appl. Phys. Lett. 39, 150 (1981).Google Scholar
11.Fulks, R. T. et al. , Appl. Phys. Lett. 39, 604 (1981).Google Scholar
12.Benton, J. L. et al. , in: Laser and Electron Beam Interaction with Solids, ed. by Appleton, B. R. and Celler, G. K. (North Holland, New York 1982) p. 765.Google Scholar
13.Borisenko, V. E. and Labunov, V. A., Phys. Stat. Sol.(a) 72, (1982) (to be published).Google Scholar
14.Crank, S., Mathematics of Diffusion, (Oxford, London 1965).Google Scholar
15.Hu, S. M. in: Atomic Diffusion in Semiconductors, ed. by Show, D. (Plenum-Press, Newa York 1973) p. 217.Google Scholar