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Gettering by Overpressurized Bubbles Induced by High-Energy-He-Implantation In Silicon

Published online by Cambridge University Press:  01 February 2011

Gabrielle Regula ,
Rachid El Bouayadi ,
Bernard Pichaud ,
Sylvie Godey ,
Romain Delamare ,
Esidor Ntsoenzok  and
Anton Van Veen
Gabrielle Regula
Affiliation:
Laboratoire TECSEN, Aix-Marseille III, Service 151, Marseille, F-13397
Rachid El Bouayadi
Affiliation:
Laboratoire TECSEN, Aix-Marseille III, Service 151, Marseille, F-13397
Bernard Pichaud
Affiliation:
Laboratoire TECSEN, Aix-Marseille III, Service 151, Marseille, F-13397
Sylvie Godey
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, Orléans cedex, F-45071
Romain Delamare
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, Orléans cedex, F-45071
Esidor Ntsoenzok
Affiliation:
CERI-CNRS, 3A, rue de la Férollerie, Orléans cedex, F-45071
Anton Van Veen
Affiliation:
IRI, Delft University of Technology, Mekelweg 15, JB Delft, NL-2629
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Abstract

Silicon samples were implanted with He ions at 1.6 MeV using doses ranging from 1×1016 cm-2 to 1×1017cm-2 with different fluxes (0.4νA/cm2 - 2.0νA/cm2) and annealed at high (1000°C) and low temperatures (800°C). The implantation induced-defect structure and their distribution in the depth of the sample were studied by cross section electron microscopy (XTEM). An unexpected consequence of the flux on the defect population and density was found solely for 2×1016 cm-2, which is the upper threshold to get nano-bubbles at such large implantation depth. Nuclear Reaction Analysis (NRA) were performed to measure the ratio of He remaining in the bubbles as a function of time and temperature anneal. Some samples were gold or nickel diffused at temperatures ranging from 870°C to 1050°C prior to He implantation. The gettering efficiency of the implantation-induced defects was measured by secondary ion mass spectroscopy (SIMS), after a high temperature getter annealing. SIMS profiles exhibit a shape and a width closely related to the presence of the defects (observed by XTEM) which are very efficient sinks for all kinds of metal impurities. The bubbles were found to be more efficient traps than the dislocation loops.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F4.2
Copyright
Copyright © Materials Research Society 2002

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