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Ge-Related Interfacial Defects In SiGe Alloy Structures

Published online by Cambridge University Press:  15 February 2011

Patricia J. Macfarlane ,
M. E. Zvanut ,
W. E. Carlos ,
M. E. Twigg  and
P. E. Thompson
Patricia J. Macfarlane
Affiliation:
Dept of Physics, University of Alabama at Birmingham, Birmingham, AL 35294–1170, [email protected]
M. E. Zvanut
Affiliation:
Dept of Physics, University of Alabama at Birmingham, Birmingham, AL 35294–1170, [email protected]
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
M. E. Twigg
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
P. E. Thompson
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

This paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous center in Si-based systems, it may alter the operation of any microelectronic or micro-optical device which incorporates an interface between SiGe and an overlying oxide. The samples examined are oxygen implanted SiGe layers in which the SG 1 center is believed to occur at the interface between oxide precipitates and SiGe. Because of the center's apparent relation to the oxide precipitates distributed through layers of the sample, a depth profile assists in confirming the interfacial nature of the defect. We obtain a depth profile by comparing electron paramagnetic resonance (EPR) spectra of samples etched to decreasing thickness. EPR spectra indicate that the SG1 center decreases with depth in a manner that when correlated to a cross sectional transmission electron micrograph confirms the association with Si0 2 and supports its location at the SiGe/SiO2 precipitate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 573
Copyright
Copyright © Materials Research Society 1996

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