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Ge Heteroepitaxy on (100) Si Substrates by Ion Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

T. G. Holesinger ,
D. J. Heim ,
K. M. Lakin  and
H. R. Shanks
T. G. Holesinger
Affiliation:
Iowa State University, Microelectronics Research Center Ames, IA.
D. J. Heim
Affiliation:
Iowa State University, Microelectronics Research Center Ames, IA.
K. M. Lakin
Affiliation:
Iowa State University, Microelectronics Research Center Ames, IA.
H. R. Shanks
Affiliation:
Iowa State University, Microelectronics Research Center Ames, IA.
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Abstract

Ge films have been grown by ion-assisted deposition on Si(100) substrates. Initial studies were conducted to determine the growth and morphology of Ge using a modified crucible arrangement and ionization chamber. It was observed that a narrow substrate temperature range existed for the deposition of smooth Ge films without ion assistance. Ionization and acceleration appear to induce additional damage to the film without improving crystalline quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 285
Copyright
Copyright © Materials Research Society 1989

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References

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