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Gated Nonlinear Transport in Organic Thin Film Transistors

Published online by Cambridge University Press:  15 February 2011

Behrang H. Hamadani  and
Douglas Natelson
Behrang H. Hamadani
Affiliation:
Department of Physics and Astronomy, Rice University, 6100 Main St. Houston, TX 77005
Douglas Natelson
Affiliation:
Department of Physics and Astronomy, Rice University, 6100 Main St. Houston, TX 77005
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Abstract

Charge transport in poly(3-hexylthiophene) field effect transistors has been studied in a series of devices with channel lengths ranging from 3 μm down to 200 nm over a broad range of temperatures and gate voltages. We report gate-modulated highly nonlinear transport at temperatures below ∼200 K that is consistent in form with a Poole-Frenkel-like hopping mechanism in the space charge limited current regime. There is also consistency between this behavior and the hypothesis that density of localized states is strongly energy dependent. We also observe what appears to be a crossover from thermally activated to nonthermal hopping below 30 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L6.10
Copyright
Copyright © Materials Research Society 2003

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