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Gate Oxide Integrity for Polysilicon Thin-film Transistors: A Comparative Study for ELC, MILC, and SPC Crystallized Active Polysilicon Layer

Published online by Cambridge University Press:  01 February 2011

D. C. Choi ,
B. D. Choi ,
J. Y. Jung ,
H. H. Park ,
J. W. Seo ,
K. Y. Lee  and
H. K. Chung
D. C. Choi
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
B. D. Choi
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
J. Y. Jung
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
H. H. Park
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
J. W. Seo
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
K. Y. Lee
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
H. K. Chung
Affiliation:
Advanced Technology Institute Samsung SDI Giheung, Yongin, Kyoungki 442-391, S. Korea
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Abstract

In this paper, we present the results of Plasma Enhanced Chemical Vapor Deposition gate oxide (SiO2) integrity on ELC (excimer laser crystallized), MILC (metal induced lateral crystallized) and SPC (solid phase crystallized) polysilicon films. We observed that gate oxide strength of poly Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50% failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1MV/cm, 6.2MV/cm, 8.1MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly Si films are the main factors that cause en-hanced breakdown of SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A22.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Stewart, Mark, Howell, Robert S., Pires, Leo and Hatalis, Miltiadis K.: IEEE Trans. Electron Devices 48 (2001) 845.10.1109/16.918227Google Scholar
2 Choi, B. D. and Schroder, D. K.: Appl. Phys. Lett. 79 (2001) 2645.10.1063/1.1410363Google Scholar
3 Schroder, D. K.: Semiconductor Material & Device Characterization (Wiley-Interscience, New York, 1998) 2nd ed.Google Scholar
4 Lee, S. W. and Joo, S. K.: IEEE Electron Device Letters, 17, No. 4, (1996) 160.Google Scholar
5 Zjin, M. Wong, Bhat, G. A. Wong, P. C. and Kwok, H.S.: IEEE Trans. Electron Devices 47 (2000) 1061.Google Scholar
6 Walz, D., Joly, J. P. Falster, R. and Kamarinos, G.: Jpn. J. Appl. Phys. 34 (1995) 4091.10.1143/JJAP.34.4091Google Scholar
7 Holzl, R., Huber, A., Fabry, L., Range, K. J. and Blietz, M.: Appl. Phys. A: Mater. Sci. Process. A72, (2001) 351.10.1007/s003390000721Google Scholar
8 Wong-Leung, J., Eaglesham, D. J. Sapjeta, J., Jacobson, D. C. Poate, J. M. and Wil-liams, J.S.: J. Appl. Phys. 83 (1998) 580.10.1063/1.366643Google Scholar
9 Choi, B. D.: Ph.D. Thesis, Electrical Engineering, Arizona State University, Tempe, Ari-zona, USA, 2001.Google Scholar