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Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures

Published online by Cambridge University Press:  01 February 2011

Yuh-Renn Wu ,
Madhusudan Singh  and
Jasprit Singh
Yuh-Renn Wu
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA.
Madhusudan Singh
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA.
Jasprit Singh
Affiliation:
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA.
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Extract

We present a self-consistent approach to examine current flow in a general metal-polar heterostructure junction. The approach is applied to examine properties of two classes of junctions that are important in devices: (i) GaN/AlGaN/high-κ insulator structures for potential applications in very small gate devices to suppress gate tunneling current; (ii) GaN/AlGaN/LiNbO3 junctions for both n-type and p-type semiconductors with practical application for low source resistance regions. The physical parameters used for high-κ dielectrics and polarization charges reflect values typically found in ferroelectric materials. Our studies indicate that tailoring of junction properties is possible if polar oxides as thin as ∼ 20Å can be achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y11.1
Copyright
Copyright © Materials Research Society 2004

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References

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