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Gas-Phase Silicon Atom Densities in the Chemical Vapor Deposition of Silicon from Silane

Published online by Cambridge University Press:  22 February 2011

Michael E. Coltrin ,
William G. Breiland  and
Pauline Ho
Michael E. Coltrin
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
William G. Breiland
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87175
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Abstract

Silicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH2 is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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