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GaSb-based Materials for Mid-infrared Photodiodes Operating in the 0.9–2.55 μm Spectral Range
Published online by Cambridge University Press: 11 February 2011
Abstract
The paper discusses some recent developments in the GaSb/GaInAsSb/GaAlAsSb heterostructure epitaxial growth and fabrication of GaInAsSb/GaAlAsSb photodiodes for the 0.9–2.55 μm spectral range.
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- Research Article
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- Copyright © Materials Research Society 2003
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