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GaAs Surface Passivation by InGaP Thin Film

Published online by Cambridge University Press:  26 February 2011

Fumiaki Hyuga ,
Tatsuo Aoki ,
Suehiro Sugitani ,
Kazuyoshi Asai  and
Yoshihiro Imamura
Fumiaki Hyuga
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan.
Tatsuo Aoki
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan.
Suehiro Sugitani
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan.
Kazuyoshi Asai
Affiliation:
NTT LSI Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan.
Yoshihiro Imamura
Affiliation:
NTT Opto-Electronics Laboratories, 3–1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–01, Japan.
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Abstract

InGaP thin films are evaluated as wide-bandgap materials for GaAs surface passivation. A 200-Å InGaP thin film increases GaAs photoluminescence intensity 25-fold and enables Schottky barrier heights of more than 0.6 eV on n-type GaAs layers with a carrier concentration of 3×1018 /cm3. These effects persist after annealing at 800 °C for 10 min. InGaP thin films are thus suitable as surface passivation films for high-performance GaAs-MESFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 777
Copyright
Copyright © Materials Research Society 1992

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References

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