Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-14T02:38:42.075Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs Photodetector for X-ray Imaging

Published online by Cambridge University Press:  21 March 2011

G. C. Sun ,
H. Samic ,
V. Donchev ,
S. Gautrot  and
J. C. Bourgoin
G. C. Sun
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France
H. Samic
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France Department of Physics, University of Sarajevo, Saobracajni Fakultet, Zmaja od Bosne 10, 71000 Sarajevo, Bosnia & Hertzegovina
V. Donchev
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France Department of Condensed Matter Physics, Sofia University, 5, blvd. James Bourchier, 1164-Sofia, Bulgaria
S. Gautrot
Affiliation:
Centre de Spectrometrie Nucléiare et Spectrometrie de Masse, Bat. 108, Université Paris-Sud, 91405 Orsay, Paris, France
J. C. Bourgoin
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France
Get access

Abstract

We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers, several hundred microns thick, in a matter of hour. Detectors consisting of a p+/i/n+ structure have been realised with these layers and we present their characteristics obtained from currentvoltage, capacitance-voltage measurements as well as their response versus the energy and flux of X-rays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H4.5.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Harding, W.R., Hilsum, C., Moncaster, M.E., Northrop, D.C., Simpson, O., Nature 30, 405 (1960).Google Scholar
2. Owens, A., Bavdaz, M., Kraft, S., Peacock, A., Strade, R., Nenonen, S., Andersson, H., Gagliardi, M.A., Gagliardi, T., and Graafsma, H., J. Appl. Phys. 86, 4341(1999).Google Scholar
3. Owens, A., Bavdaz, M., Kraft, S., Peacock, A., Nenonen, S., Andersson, H., Gagliardi, M.A., Gagliardi, T., Scholze, F., J. Appl. Phys. 85, 7522(1999).Google Scholar
4. Eberhardt, J.E., Ryan, R.D. and Tavendale, T.J., Nucl. Inst. and Meth. 94, 463(1971).Google Scholar
5. Hesse, K., Gramman, W. and Hoppner, O., Nucl. Inst. and Meth. 101, 39(1972).Google Scholar
6. Gibbons, P.E. and Howes, J.E., IEEE Trans. Nucl. Sci. NS 19, 353(1972).Google Scholar
7. Kobayashi, T., Sugita, T., Koyama, M. and Takayanagi, S., IEEE Trans. Nucl. Sci. NS 19, 324(1972).Google Scholar
8. Mcgregor, D. S., Semiconductors and Semimetals (Academic press, 1995) Vol.43, pp. 383–437.Google Scholar
9. Bourgoin, J. C., Bardeleben, H. Jron and Strevenard, D., J. Appl. Phys. 64, R65(88).Google Scholar
10. Hammadi, M., Bourgoin, J.C., Samic, H., J. Mat. Sci.: Mat. in Electronics 10, 399(1999).Google Scholar
11. Mir, L. El, Gandouzi, M., Hammadi, M., Samic, H. and Bourgoin, J.C., Current Topics in Crystal Growth Research 5, 131(1999).Google Scholar
12. Samic, H., Bourgoin, J. C., Pajor, B., Bisaro, R., Grattejaim, C., Khiroum, K., Pubero, M. and Burle, M., Proceedings 24th IEEE sympsium on Compound Semiconductors (1998) p.155Google Scholar
13. Gandouzi, M., Bourgoin, J. C., Elmir, L., Stellmacher, M. an Oring, V., J. Crystal growth 234, 279 (2002).Google Scholar
14. Bourgoin, J. C., de Angelis, N., Smith, K., Bates, R., Whiteliell, C. and Meckle, A., Nucl. Inst. and Meth. A 458, 344 (2001).Google Scholar
15. Nowotny, R., Fortschr. Rontgenstr 142, 685(1985).Google Scholar