Hostname: page-component-669899f699-g7b4s Total loading time: 0 Render date: 2025-04-27T20:36:00.098Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs Micro Crystal Growth on A As-Terminated Si (001) Surface by Low Energy Focused Ion Beam

Published online by Cambridge University Press:  09 August 2011

Toyohiro Chikyow  and
Nobuyuki Koguchi
Toyohiro Chikyow
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba lbaraki 305, Japan, [email protected]
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba lbaraki 305, Japan, [email protected]
Get access

Abstract

Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 445
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Sakaki, H., Surface Science 267,623 (1992).Google Scholar
2. Arakawa, Y. and Sakaki, H., Appl. Phys. Lett 40, 939 (1982).Google Scholar
3. Ohtaka, M., J. Appl. Phys. 34, 4502 (1995).Google Scholar
4. Yablonovitch, Phys. Rev. Lett. 58, 2059 (1987).Google Scholar
5. Chikyow, T. and Koguchi, N., Appl. Phys. Lett.,61, 2431 (1992).Google Scholar
6. Koguchi, N. and Ishige, K., Jpn. J. Appl. Phys.,32, 2052 (1993).Google Scholar
7. Chikyow, T. and Koguchi, N., J.Vac.Sci.Technol. B 16(4), 2538 (1998).Google Scholar
8. Kbiegelsen, D.,Bringans, R. D.,Northrop, J. E., Schabel, M. C. and Swartz, L. E. Phys.Rev. B 47,9589 (1993).Google Scholar
9. Chikyow, T. and Koguchi, N., Surface Science 386, 254 (1997).Google Scholar
10. Nakada, Y. and Okumura, H., J.Vac. Sci. Technol. B 16, 645 (1998).Google Scholar
11. Kreager, P. and Pollman, J., Phys.Rev. B 47,1898 (1993).Google Scholar